Electric-Field-Induced Gap States in Pentacene

被引：47

作者：

Knipp, Dietmar ^{[1
]}

Northrup, John E. ^{[2
]}

机构：

[1] Jacobs Univ Bremen, Sch Sci & Engn, Elect Devices & Nanophoton Lab, D-28759 Bremen, Germany

[2] Palo Alto Res Ctr, Elect Mat & Devices Lab, Palo Alto, CA 94304 USA

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 24期

关键词：

GROUND-STATE; TRANSISTORS; MORPHOLOGY;

D O I：

10.1002/adma.200802173

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electrical measurements of a pentacene (Pn) thin-film transistor reveal that oxygen exposure under certain bias voltages results in the formation of Pn gap states, whose influence on transistor properties is relevant to the development of organic electronics. A model explaining the origin of these states is presented, and the current/voltage characteristics of the transistor are simulated using results from pseudopotential density functional theory.

引用

页码：2511 / +

页数：6

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