Preparation of few-layer graphene on on-axis 4H-SiC (000(1)over-bar) substrates using a modified SiC-stacked method

被引：6
作者：
Hu, Yanfei
Zhang, Yuming
Guo, Hui [1 ]
Chong, LaiYuan
Zhang, Yimen
机构：
[1] Xidian Univ, Sch Microelect, 2 South Taibai Rd, Xian 710071, Peoples R China
来源：
MATERIALS LETTERS | 2016年 / 164卷
关键词：
Carbon materials; Epitaxial growth; Modified SiC-stacked cap; Raman;
D O I：
10.1016/j.matlet.2015.10.116
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Large area graphene films have been successfully grown on on-axis 4H-SiC (000 (1) over bar) by adding a modified SiC cap. Both the morphology and crystalline quality of modified SiC-stacked epitaxial graphene were investigated. The results reveal that domains of modified SiC-stacked epitaxial graphene are much larger, while the corresponding terraces are much more orderly than those formed by traditional face-to-face method (a SiC wafer used as the cap). It is also shown that the process of modified SiC-stacked thermal decomposition is more controllable and the modified SiC-stacked epitaxial graphene is of high quality. This could provide a method to fabricate wafer-sized high-quality graphene films. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：655 / 658
页数：4
相关论文
共 15 条
[1]   General equation for the determination of the crystallite size La of nanographite by Raman spectroscopy [J].
Cançado, LG ;
Takai, K ;
Enoki, T ;
Endo, M ;
Kim, YA ;
Mizusaki, H ;
Jorio, A ;
Coelho, LN ;
Magalhaes-Paniago, R ;
Pimenta, MA .
APPLIED PHYSICS LETTERS, 2006, 88 (16)
[2]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[3]  
Celebi C., 2011, GROWTH THIN GRAPHENE, P1109
[4]   Epitaxial graphene [J].
de Heer, Walt A. ;
Berger, Claire ;
Wu, Xiaosong ;
First, Phillip N. ;
Conrad, Edward H. ;
Li, Xuebin ;
Li, Tianbo ;
Sprinkle, Michael ;
Hass, Joanna ;
Sadowski, Marcin L. ;
Potemski, Marek ;
Martinez, Gerard .
SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :92-100
[5]   Raman scattering from high-frequency phonons in supported n-graphene layer films [J].
Gupta, A. ;
Chen, G. ;
Joshi, P. ;
Tadigadapa, S. ;
Eklund, P. C. .
NANO LETTERS, 2006, 6 (12) :2667-2673
[6]   Side-gate graphene field-effect transistors with high transconductance [J].
Haehnlein, B. ;
Haendel, B. ;
Pezoldt, J. ;
Toepfer, H. ;
Granzner, R. ;
Schwierz, F. .
APPLIED PHYSICS LETTERS, 2012, 101 (09)
[7]   The growth and morphology of epitaxial multilayer graphene [J].
Hass, J. ;
de Heer, W. A. ;
Conrad, E. H. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (32)
[8]   RAMAN-SCATTERING FROM NANOSCALE CARBONS GENERATED IN A COBALT-CATALYZED CARBON PLASMA [J].
HOLDEN, JM ;
PING, Z ;
BI, XX ;
EKLUND, PC ;
BANDOW, SJ ;
JISHI, RA ;
DASCHOWDHURY, K ;
DRESSELHAUS, G ;
DRESSELHAUS, MS .
CHEMICAL PHYSICS LETTERS, 1994, 220 (3-5) :186-191
[9]   Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2 [J].
Lee, Dong Su ;
Riedl, Christian ;
Krauss, Benjamin ;
von Klitzing, Klaus ;
Starke, Ulrich ;
Smet, Jurgen H. .
NANO LETTERS, 2008, 8 (12) :4320-4325
[10]   Formation process of graphene on SiC (0001) [J].
Norimatsu, W. ;
Kusunoki, M. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (04) :691-694
12