Modeling of nanoelectronic and quantum devices

The semiconductor industry is constantly pushing towards ever smaller devices and it is expected that we will see commercial devices with gate lengths less than 10 nm within the next decade. Such small devices have active regions that are smaller than relevant coherence lengths, so that full quantum modeling will be required. In addition, novel new structures, such as molecules, may represent the active regions in such small devices. Here we outline a fully quantum mechanical approach to the modeling of coherent transport in ballistic structures. Examples of an SOI MOSFET and a molecule are presented.