A study on the characteristic of parameters by the response surface method in final wafer polishing

被引:17
作者
Lee, Eun-Sang [1 ]
Hwang, Sung-Chul [1 ]
Lee, Jung-Taik [1 ]
Won, Jong-Koo [1 ]
机构
[1] Inha Univ, Sch Mech Engn, Inchon 402751, South Korea
基金
新加坡国家研究基金会;
关键词
Si-wafer; Box-Behnken method; Final polishing; Surface roughness; MATERIAL-REMOVAL RATE; CHEMICAL-MECHANICAL PLANARIZATION; SILICON-WAFERS; PAD; SLURRY; OPTIMIZATION; ROUGHNESS; CMP; DESIGN; WEAR;
D O I
10.1007/s12541-009-0043-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in final wafer polishing is mainly affected by the many process parameters. For decreasing the surface, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by using central composite designs such as the Box-Behnken method. Moreover, in accordance with variation of process variables, there is a temperature change on pad surface. And so, this paper also researches that this temperature variation affects surface roughness of Si-wafer.
引用
收藏
页码:25 / 30
页数:6
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