Calculation of the surface energy of fcc metals with modified embedded-atom method

被引:1
作者
Zhang, JM [1 ]
Fei, M
Xu, KW
机构
[1] Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Peoples R China
[2] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
来源
CHINESE PHYSICS | 2004年 / 13卷 / 07期
关键词
fcc metals; surface energy; calculation; modified embedded-atom method;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The surface energies for 38 surfaces of fcc metals Cu, Ag, Au, Ni, Pd, Pt, Al, Pb, Rh and Ir have been calculated by using the modified embedded-atom method. The results show that, for Cu, Ag, Ni, Al, Pb and Ir, the average values of the surface energies are very close to the polycrystalline experimental data. For all fcc metals, as predicted, the close-packed (111) surface has the lowest surface energy. The surface energies for the other surfaces increase linearly with increasing angle between the surfaces (hkl) and (111). This can be used to estimate the relative values of the surface energy.
引用
收藏
页码:1082 / 1090
页数:9
相关论文
共 45 条
[1]   Correlation between texture and average grain size in polycrystalline Ag thin films [J].
Adamik, M ;
Barna, PB ;
Tomov, I .
THIN SOLID FILMS, 2000, 359 (01) :33-38
[2]   SELF-DIFFUSION AND IMPURITY DIFFUSION OF FCC METALS USING THE 5-FREQUENCY MODEL AND THE EMBEDDED ATOM METHOD [J].
ADAMS, JB ;
FOILES, SM ;
WOLFER, WG .
JOURNAL OF MATERIALS RESEARCH, 1989, 4 (01) :102-112
[3]  
[Anonymous], 1985, PHYS PROPERTIES CRYS
[4]   LOW-RESISTIVITY CU THIN-FILM DEPOSITION BY SELF-ION BOMBARDMENT [J].
BAI, P ;
YANG, GR ;
LU, TM .
APPLIED PHYSICS LETTERS, 1990, 56 (02) :198-200
[5]   SEMIEMPIRICAL MODIFIED EMBEDDED-ATOM POTENTIALS FOR SILICON AND GERMANIUM [J].
BASKES, MI ;
NELSON, JS ;
WRIGHT, AF .
PHYSICAL REVIEW B, 1989, 40 (09) :6085-6100
[7]   MODIFIED EMBEDDED-ATOM POTENTIALS FOR CUBIC MATERIALS AND IMPURITIES [J].
BASKES, MI .
PHYSICAL REVIEW B, 1992, 46 (05) :2727-2742
[8]   RELATIONSHIP OF CRYSTALLOGRAPHIC ORIENTATION AND IMPURITIES TO STRESS, RESISTIVITY, AND MORPHOLOGY FOR SPUTTERED COPPER-FILMS [J].
BURNETT, AF ;
CECH, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (06) :2970-2974
[9]   FORMATION OF COPPER SILICIDES FROM CU(100)/SI(100) AND CU(111)/SI(111) STRUCTURES [J].
CHANG, CA .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :566-569
[10]   ORDER-DISORDER TRANSITION OF AU(110) AND PT(110) SURFACES - THE SIGNIFICANCE OF RELAXATIONS AND VIBRATIONS [J].
DAW, MS ;
FOILES, SM .
PHYSICAL REVIEW LETTERS, 1987, 59 (24) :2756-2759