Photodamage resistance properties and application of In:LiNbO3

被引：0

作者：

Xu, WS ^{[1
]}

Wang, R

Zhen, XH

Zhang, WL

Chen, XJ

Wang, ZP

Zhouguangyong

机构：

[1] Harbin Inst Technol, Dept Appl Chem, Harbin 150001, Peoples R China

[2] Nankai Univ, Inst Phys, Tianjin 300071, Peoples R China

[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

FERROELECTRICS | 2001年 / 253卷 / 1-4期

关键词：

In : LiNbO3 crystal; photodamage threshold value; phase matching temperature;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Doping different concentrations of In2O3 in LiNbO3, In:LiNbO3 crystals were grown. The photodamage threshold value and infrared transmittance spectra of the crystals were measured. we measured the absorption edge shift and OH- absorption peak shift. The shg conversion efficiency and the phase-matching temperature are increased by in doping. The phase-matching temperature of In:LiNbO3 is lower than that of Mb:LiNbO3 and Zn:LiNbO3.

引用

页码：709 / 715

页数：7

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