Temperature-dependent microtensile testing of thin film materials for application to microelectromechanical system

被引:18
作者
Lin, Ming-Tzer [1 ]
El-Deiry, Paul
Chromik, Richard R.
Barbosa, Nicholas
Brown, Walter L.
Delph, Terry J.
Vinci, Richard P.
机构
[1] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan
[2] Natl Chung Hsing Univ, Ctr Nanosci & Nanotechnol, Taichung 402, Taiwan
[3] Lehigh Univ, Mat Sci & Mech Engn Dept, Bethlehem, PA 18015 USA
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2006年 / 12卷 / 10-11期
关键词
D O I
10.1007/s00542-006-0129-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A specially designed microtensile apparatus capable of carrying out a series of tests on microscale thin films for microelectromechanical system (MEMS) applications at room temperature and at temperature up to 400 degrees C has been developed and tested, and is described here. Several MEMS-applicable thin films were measured with it, including thermally grown silicon dioxide, gold, and gold-vanadium. The silicon dioxide was tested at room temperature. Gold and gold-vanadium films were tested at room temperature and at 200 and 400 degrees C. Examples of these results are presented.
引用
收藏
页码:1045 / 1051
页数:7
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