Room-temperature epitaxial growth of V2O3 films

被引：7

作者：

Liu XiangBo ^{[1
]}

Lu HuiBin ^{[1
]}

He Meng ^{[1
]}

Jin KuiJuan ^{[1
]}

Yang GuoZhen ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

来源：

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2014年 / 57卷 / 10期

关键词：

room-temperature epitaxy; V2O3; metal-insulator transition; METAL-INSULATOR-TRANSITION; ELECTRONIC-PROPERTIES; VANADIUM-OXIDES; THIN-FILMS; STRAIN; PHASE;

D O I：

10.1007/s11433-014-5483-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Herein we report the room-temperature epitaxial growth of V2O3 films by laser molecule beam epitaxy. X-ray diffraction profiles show the room-temperature epitaxial V2O3 films orient in the [110] direction on alpha-Al2O3 (0001) substrates. Atomic force microscopy measurements reveal that the ultra-smooth surfaces with root-mean-square surface roughness of 0.11 nm and 0.28 nm for 10-nm-thick and 35-nm-thick V2O3 film, respectively. X-ray photoelectron spectroscopy results indicate the V3+ oxidation state in the films. Typical metal-insulator transition is observed in films at about 135 K. The resistivities at 300 K are approximately 0.8 m Omega cm and 0.5 m Omega cm for 10-nm-thick and 35-nm-thick V2O3 film, respectively.

引用

页码：1866 / 1869

页数：4

共 20 条

[1] Growth of V2O3 thin films on a-plane (110) and c-plane (001) sapphire via pulsed-laser deposition [J].