Near-infrared holographic photorefractive recording under applied electric field in undoped Bi12TiO20 sillenite crystal

被引：9
作者：
Moura, Andre L. [1 ]
Pereira, Alexsandro F. [2 ]
Canabarro, Askery [1 ,3 ]
Carvalho, Jesiel F. [4 ]
de Oliveira, Ivan [5 ]
dos Santos, Pedro V. [2 ]
机构：
[1] Univ Fed Alagoas, Nucleo Ciencias Exatas, Grp Fis Mat Condensada, Campus Arapiraca, BR-57309005 Arapiraca, AL, Brazil
[2] Univ Fed Alagoas, Inst Fis, BR-57072970 Maceio, AL, Brazil
[3] Univ Fed Rio Grande do Norte, Int Inst Phys, BR-59070405 Natal, RN, Brazil
[4] Univ Fed Goias, Inst Fis, Goiania, Go, Brazil
[5] Univ Estadual Campinas, Fac Tecnol, GOMNI Grp Opt & Modelagem Numer, Limeira, SP, Brazil
来源：
OPTICAL MATERIALS | 2020年 / 108卷
关键词：
Diffraction; Holographic gratings; Holographic recording; Photorefractive effect; Photorefractive materials; BI12SIO20; AMPLIFICATION; STORAGE; BTO;
D O I：
10.1016/j.optmat.2020.110398
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Direct holographic recording in undoped Bi12TiO20 crystal at 1064 nm is investigated aiming the characterization of diffraction efficiency under action of applied dc electric field (E-0). An enhancement of 12-fold in the diffraction efficiency was revealed when E-0 increased from 0.0 to 4.2 kV/cm. The theoretical dependence of the diffraction efficiency and the holographic erasure time upon E-0 was investigated using the standard model of Kukhtarev for photorefractivity and the results showed a good experimental data fitting in both cases, allowing the computation of the effective trap concentration (N-D)(eff) approximate to 5.62 x 10(15) cm(-3) which is responsible by the recording mechanism into the crystal sample. In particular, the theoretical-experimental investigation using the holographic erasure time also allowed to determine others relevant parameters for Bi12TiO20 such as the diffusion transport length L-D, the Maxwell relaxation time tau(M), and the quantum efficiency Phi that can explain the relatively slow dynamics of photorefractive recording and erasure in near-infrared region. The type of charge carrier involved in the recording mechanism in the near-infrared region is also discussed.
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页数：6
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