The impact of plasma-charging damage on the RF performance of deep-submicron MOSFET

被引：0
|
作者：
Pantisano, L [1 ]
Cheung, KP
Roussel, PJ
Paccagnella, A
机构：
[1] IMEC, Louvain, Belgium
[2] Rutgers State Univ, New Brunswick, NJ 08903 USA
[3] Univ Padua, Dept Elettron & Informat, Padua, Italy
来源：
IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 06期
关键词：
high-frequency; MOSFET; plasma-charging damage; reliability thermal annealing;
D O I：
10.1109/LED.2002.1004218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Integration of RF analog functions with CMOS digital circuits offers great advantages in terms of cost and performance. Plasma-charging damage is known to degrade MOSFET characteristics and can be expected to impact the RF performance as well. In this work, we present for the first time a thorough investigation of the impact of plasma-charging damage on the RF characteristics of deep-submicron MOSFET. Our result shows that, with ultra-thin gate oxide, a 400degreesC forming gas annealing can completely recover the RF performance degradation due to plasma-charging damage.
引用
收藏
页码：309 / 311
页数：3
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