Zn incorporation in CuInSe2: Particle size and strain effects on microstructural and electrical properties

被引：7

作者：

Benabdeslem, M. ^{[1
]}

Bouasla, A. ^{[1
]}

Benslim, N. ^{[1
]}

Bechiri, L. ^{[1
]}

Mehdaoui, S. ^{[1
]}

Aissaoui, O. ^{[1
]}

Djekoun, A. ^{[1
]}

Fromm, M. ^{[2
]}

Portier, X. ^{[3
]}

机构：

[1] Univ Annaba, Lab LESIMS, Sidi Amar 23200, Algeria

[2] UFR Sci & Tech, Ctr Microanal Nucl, F-25030 Besancon, France

[3] Univ Caen, ENSICAEN, CIMAP, F-14050 Caen, France

来源：

BULLETIN OF MATERIALS SCIENCE | 2014年 / 37卷 / 03期

关键词：

CuInSe2; doping; zinc; Williamson-Hall; high frequency; CU(IN; GA)SE-2; THIN-FILMS; DEPOSITION; DIFFUSION;

D O I：

10.1007/s12034-014-0687-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Incorporation of the doping element Zn in the temperature range (550-700 degrees C) and the impact on structural and electrical properties of CuInSe2 material are investigated. X-ray diffraction patterns showed the chalcopyrite nature of the pure and doped CuInSe2 and revealed that diffusion temperature governs particle size as well as tensile strain. The calculated lattice parameters and cell volumes revealed that Zn diffuses in CuInSe2 by substitution on Cu sites. Electrical properties of the material have been investigated using a contact-less technique based on high frequency microwave (HF). It is found that Zn atoms influence the defect equilibrium resulting in the conversion of the conduction type. The conductivity of the samples has been found increasing as the diffusion temperature increases.

引用

页码：469 / 472

页数：4

共 18 条

[1] DC and high-frequency conductivity of CuInSe2 bulk crystals [J].

Benabdeslem, M. ;

Benslim, N. ;

Bechiri, L. ;

Mahdjoubi, L. ;

Djekoun, A. ;

Otmani, A. ;

Nouet, G. ;

Theobald, J. G. ;

Fromm, M. .

THIN SOLID FILMS, 2007, 515 (15) :6226-6228

[2] Diffusion of Zn in CuInSe2 bulk crystals [J].

Benabdeslem, M ;

Benslim, N ;

Bechiri, L ;

Mahdjoubi, L ;

Hannech, EB ;

Nouet, G .

JOURNAL OF CRYSTAL GROWTH, 2005, 274 (1-2) :144-148

[3]

Cullity B D, 1971, ELEMENTS XRAY DIFFRA, P335

[4] Conductivity and photoconductivity in boron doped diamond films:: Microwave measurements [J].

Gevrey, F ;

Gire, A ;

Gaudiot, D ;

Théobald, JG ;

Gheeraert, E ;

Bernard, M ;

Torrealba-Anzola, F .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4251-4255

[5] A new technique to assess electrical behaviour by microwave measurements, application to Perovskites RNiO(3) (R=Nd, Sm) [J].

Gire, A ;

Jouffroy, M ;

Theobald, JG ;

Bohnke, O ;

Frand, G ;

Lacorre, P .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1997, 58 (04) :577-586

[6] Solar cell efficiency tables (Version 30) [J].

Green, Martin A. ;

Emery, Keith ;

Hisikawa, Yoshihiro ;

Warta, Wilhelm .

PROGRESS IN PHOTOVOLTAICS, 2007, 15 (05) :425-430

[7] Light soaking effects in Cu(In,Ga)Se2 superstrate solar cells [J].

Haug, FJ ;

Rudmann, D ;

Zogg, H ;

Tiwari, AN .

THIN SOLID FILMS, 2003, 431 :431-435

[8] Observation of intermixing at the buried CdS/Cu(In,Ga)Se2 thin film solar cell heterojunction [J].

Heske, C ;

Eich, D ;

Fink, R ;

Umbach, E ;

van Buuren, T ;

Bostedt, C ;

Terminello, LJ ;

Kakar, S ;

Grush, MM ;

Callcott, TA ;

Himpsel, FJ ;

Ederer, DL ;

Perera, RCC ;

Riedl, W ;

Karg, F .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1451-1453

[9]

Kenshole GE, 1984, PHOT SOL EN C P 5 IN, P65

[10] Direct evidence of Cd diffusion into Cu(In,Ga)Se2 thin films during chemical-bath deposition process of CdS films [J].

Nakada, T ;

Kunioka, A .

APPLIED PHYSICS LETTERS, 1999, 74 (17) :2444-2446

← 1 2 →