Chromium fluoride attenuated phase-shifting mask for argon fluoride excimer laser lithography

被引：14

作者：

Ushioda, J ^{[1
]}

Seki, Y ^{[1
]}

Maeda, K ^{[1
]}

Ohfuji, T ^{[1
]}

Tanabe, H ^{[1
]}

机构：

[1] NEC CORP LTD,FUNCT DEVICES RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 216,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 12B期

关键词：

CrF; ArF excimer laser; phase-shifting mask; RT method; DOFs; resolution limit; chemically amplified resist;

D O I：

10.1143/JJAP.35.6356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chromium fluoride (CrF) film was chosen as the phase shifter for attenuated phase-shifting masks because of its high transmittance at 193 nm. The refractive index n and absorption coefficient k was derived by using the reflectance-transmittance (RT) method. Using argon fluoride (ArF) excimer laser exposure equipment and a chemically amplified positive resist, fine hole patterns were resolved. Depth of focus (DOFs) with 0.24 mu m were extended to 30%. The resolution limit was 0.20 mu m, while it was 0.22 mu m with a conventional mask.

引用

页码：6356 / 6359

页数：4

共 14 条

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