The Effect of the number of InGaN/GaN pairs on the photoelectrochemical properties of InGaN/GaN multi quantum wells

被引：13

作者：

Bae, Hyojung ^{[1
]}

Park, Jun-Beom ^{[1
]}

Fujii, Katsushi ^{[2
]}

Lee, Hyo-Jong ^{[3
]}

Lee, Sang-Hyun ^{[4
]}

Ryu, Sang-Wan ^{[1
]}

Lee, June Key ^{[1
]}

Ha, Jun-Seok ^{[1
]}

机构：

[1] Chonnam Natl Univ, Optoelect Convergence Res Ctr, 77 Yongbong Ro, Gwangju 61186, South Korea

[2] Univ Kitakyushu, Inst Environm Sci & Technol, Kitakyushu, Fukuoka, Japan

[3] Dong A Univ, Mat Sci & Engn, Busan 49315, South Korea

[4] Korea Inst Sci & Technol, Inst Adv Composite Mat, Joellabuk Do 55324, South Korea

来源：

APPLIED SURFACE SCIENCE | 2017年 / 401卷

基金：

新加坡国家研究基金会;

关键词：

Hydrogen generation; InGaN/GaN; Multi quantum well; Photoelectrochemistry; Water splitting; GENERATION; NANOWIRES;

D O I：

10.1016/j.apsusc.2016.12.049

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, the effects of the number of quantum well (QW) pairs on the photoelectrochemical (PEC) properties of InGaN/GaN multi-QW structures (MQWs) were investigated. MQW samples were grown using metal-organic chemical vapor deposition, and their structural characteristics were confirmed by X-ray diffraction measurements. The photoluminescence measurements revealed that the optical properties of MQWs may be related to the PEC properties. The cyclic voltammetry data revealed that the saturated photocurrent density increased with increasing number of QW pairs; the photocurrent density of MQW5 was twice that of an nGaN reference. However, in the chronoamperometry measurement of the photoanode stability, MQWs with 3 QWs displayed the highest photocurrent stability, although the saturated photocurrent density was highest for MQW5. This was also confirmed by field-emission scanning electron microscopy of the surface morphology after PEC measurements. The stability and photocurrent density may be attributed to the quality of crystallinity of the MQWs. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：348 / 352

页数：5

共 24 条

[11] Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs [J].