Universal behaviour of metal-insulator transitions in the p-SiGe system

被引：4

作者：

Coleridge, PT ^{[1
]}

Zawadzki, P ^{[1
]}

Sachrajda, AS ^{[1
]}

Williams, RL ^{[1
]}

Feng, Y ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICA E | 2000年 / 6卷 / 1-4期

关键词：

metal-insulator transition; SiGe; quantum wells;

D O I：

10.1016/S1386-9477(99)00142-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B = 0 metal-insulator transition. The close relationship between this transition, the high-field Hall insulator transition and the filling factor v = 3/2 insulating state is demonstrated. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：268 / 271

页数：4

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