Ultra-broadband terahertz metamaterial absorber

被引：391

作者：

Zhu, Jianfei ^{[1
]}

Ma, Zhaofeng ^{[1
]}

Sun, Wujiong ^{[2
,3
,4
]}

Ding, Fei ^{[1
]}

He, Qiong ^{[2
,3
,4
]}

Zhou, Lei ^{[2
,3
,4
]}

Ma, Yungui ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Opt Engn, Ctr Opt & Electromagnet Res, State Key Lab Modern Opt Instrumentat, Hangzhou 310058, Zhejiang, Peoples R China

[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[3] Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist Educ, Shanghai 200433, Peoples R China

[4] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 02期

基金：

中国博士后科学基金;

关键词：

REGIME; REFRACTION; SENSOR;

D O I：

10.1063/1.4890521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated an ultra-broadband, polarization-insensitive, and wide-angle metamaterial absorber for terahertz (THz) frequencies using arrays of truncated pyramid unit structure made of metal-dielectric multilayer composite. In our design, each sub-layer behaving as an effective waveguide is gradually modified in their lateral width to realize a wideband response by effectively stitching together the resonance bands of different waveguide modes. Experimentally, our five layer sample with a total thickness 21 mu m is capable of producing a large absorptivity above 80% from 0.7 to 2.3 THz up to the maximum measurement angle 40 degrees. The full absorption width at half maximum of our device is around 127%, greater than those previously reported for THz frequencies. Our absorber design has high practical feasibility and can be easily integrated with the semiconductor technology to make high efficient THz-oriented devices. (C) 2014 AIP Publishing LLC.

引用

页数：4