Spectroscopic studies of random telegraph noise in small InP quantum dots in GaxIn1-xP -: art. no. 073309

被引:6
作者
Panev, N [1 ]
Pistol, ME [1 ]
Persson, J [1 ]
Seifert, W [1 ]
Samuelson, L [1 ]
机构
[1] Lund Univ, SE-22100 Lund, Sweden
来源
PHYSICAL REVIEW B | 2004年 / 70卷 / 07期
关键词
D O I
10.1103/PhysRevB.70.073309
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have observed and investigated random telegraph noise in the photoluminescence (PL) from small InP quantum dots (QDs) in GaInP. Very few of the QDs exhibit switching between two states, which have similar total intensities, but distinctly different spectra. Usually, one of the states dominates at low excitation power and the other at high excitation power. The switching occurs on the time scale of one second and is stable with respect to annealing at room temperature, but the QDs can be permanently settled in one of the states by strong illumination. Measurements on QDs in a semitransparent Schottky diode show that the QDs can be reversibly forced into one of the states by applying a reverse bias of the order of 1 V. This switching behavior is different than what has been previously observed because there is no change in the total PL intensity and, at the same time, both states cannot be explained as simply being shifted by an electric field, but show distinctly different emission spectra.
引用
收藏
页码:073309 / 1
页数:4
相关论文
共 16 条
  • [1] Two color blinking of single strain-induced GaAs quantum dots
    Bertram, D
    Hanna, MC
    Nozik, AJ
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (18) : 2666 - 2668
  • [2] Few-particle effects in single CdTe quantum dots
    Besombes, L
    Kheng, K
    Marsal, L
    Mariette, H
    [J]. PHYSICAL REVIEW B, 2002, 65 (12) : 1 - 4
  • [3] STUDY OF THE 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION IN METALORGANIC VAPOR-PHASE EPITAXY OF GAINP/INP QUANTUM-SIZED STRUCTURES
    CARLSSON, N
    SEIFERT, W
    PETERSSON, A
    CASTRILLO, P
    PISTOL, ME
    SAMUELSON, L
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (24) : 3093 - 3095
  • [4] Random telegraph signal in the photoluminescence intensity of a single quantum dot
    Efros, AL
    Rosen, M
    [J]. PHYSICAL REVIEW LETTERS, 1997, 78 (06) : 1110 - 1113
  • [5] Photon beats from a single semiconductor quantum dot
    Flissikowski, T
    Hundt, A
    Lowisch, M
    Rabe, M
    Henneberger, F
    [J]. PHYSICAL REVIEW LETTERS, 2001, 86 (14) : 3172 - 3175
  • [6] Electron accumulation in single InP quantum dots observed by photoluminescence
    Hessman, D
    Persson, J
    Pistol, ME
    Pryor, C
    Samuelson, L
    [J]. PHYSICAL REVIEW B, 2001, 64 (23)
  • [7] NOISE IN SOLID-STATE MICROSTRUCTURES - A NEW PERSPECTIVE ON INDIVIDUAL DEFECTS, INTERFACE STATES AND LOW-FREQUENCY (1/F) NOISE
    KIRTON, MJ
    UREN, MJ
    [J]. ADVANCES IN PHYSICS, 1989, 38 (04) : 367 - 468
  • [8] Optical studies of individual InAs quantum dots in GaAs: Few-particle effects
    Landin, L
    Miller, MS
    Pistol, ME
    Pryor, CE
    Samuelson, L
    [J]. SCIENCE, 1998, 280 (5361) : 262 - 264
  • [9] Correlation between fluorescence intermittency and spectral diffusion in single semiconductor quantum dots
    Neuhauser, RG
    Shimizu, KT
    Woo, WK
    Empedocles, SA
    Bawendi, MG
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (15) : 3301 - 3304
  • [10] Fluorescence intermittency in single cadmium selenide nanocrystals
    Nirmal, M
    Dabbousi, BO
    Bawendi, MG
    Macklin, JJ
    Trautman, JK
    Harris, TD
    Brus, LE
    [J]. NATURE, 1996, 383 (6603) : 802 - 804