High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing

被引：6
|
作者：
Wu, Chien Hung [1 ]
Huang, Hau Yuan [2 ]
Wang, Shui Jinn [2 ]
Chang, Kow Ming [3 ,4 ]
机构：
[1] Chung Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Microelect Lab, Tainan 701, Taiwan
[3] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan
[4] I Shou Univ, Coll Elect & Informat Engn, Kaohsiung 840, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 10期
关键词：
Atmospheric pressure plasma jet (APPJ); indium gallium zinc oxide (InGaZnO); thin-film transistors (TFTs); ELECTRICAL-PROPERTIES; CHANNEL; TEMPERATURES; FABRICATION; LIGHT; FILMS;
D O I：
10.1109/LED.2014.2346774
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm(2) laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm(2)/V-s, the ON-OFF current ratio of 7 x 10(5), and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.
引用
收藏
页码：1031 / 1033
页数：3
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