High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing

被引：6

作者：

Wu, Chien Hung ^{[1
]}

Huang, Hau Yuan ^{[2
]}

Wang, Shui Jinn ^{[2
]}

Chang, Kow Ming ^{[3
,4
]}

机构：

[1] Chung Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Microelect Lab, Tainan 701, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan

[4] I Shou Univ, Coll Elect & Informat Engn, Kaohsiung 840, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 10期

关键词：

Atmospheric pressure plasma jet (APPJ); indium gallium zinc oxide (InGaZnO); thin-film transistors (TFTs); ELECTRICAL-PROPERTIES; CHANNEL; TEMPERATURES; FABRICATION; LIGHT; FILMS;

D O I：

10.1109/LED.2014.2346774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm(2) laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm(2)/V-s, the ON-OFF current ratio of 7 x 10(5), and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.

引用

页码：1031 / 1033

页数：3

共 50 条

[1] Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing
Hau-Yuan Huang
Shui-Jinn Wang
Chien-Hung Wu
Chien-Yuan Lu
Electronic Materials Letters, 2014, 10 : 899 - 902
[2] Improvement of Electrical Performance of InGaZnO/HfSiO TFTs with 248-nm Excimer Laser Annealing
Huang, Han-Yuan
Wang, Shui-Jinn
Wu, Chien-Hung
Lu, Chien-Yuan
ELECTRONIC MATERIALS LETTERS, 2014, 10 (05) : 899 - 902
[3] SUB-0.5 MU-M LITHOGRAPHY USING AN EXCIMER LASER AT 248-NM
KUNG, EH
CHENG, M
NALAMASU, O
TIMKO, AG
CASE, CB
POL, V
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B): : 3030 - 3036
[4] Numerical method to predict and fabricate aspherical microlens arrays using 248-nm excimer laser ablation
Pan, CT
Shen, SC
Hsieh, CC
Chien, CH
Chen, YC
JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2004, 3 (04): : 555 - 562
[5] HIGH-MOBILITY POLY-SI TFTS FABRICATED BY A NOVEL EXCIMER-LASER CRYSTALLIZATION METHOD
SHIMIZU, K
SUGIURA, O
MATSUMURA, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2664 - 2665
[6] Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
Fujii, Mami
Ishikawa, Yasuaki
Ishihara, Ryoichi
van der Cingel, Johan
Mofrad, Mohammad R. T.
Horita, Masahiro
Uraoka, Yukiharu
APPLIED PHYSICS LETTERS, 2013, 102 (12)
[7] CHARACTERIZATION OF DYE-LASER PUMPING USING A HIGH-POWER KRF EXCIMER LASER AT 248 NM
MCKEE, TJ
JAMES, DJ
CANADIAN JOURNAL OF PHYSICS, 1979, 57 (09) : 1432 - 1436
[8] Microchannel Fabrication in Fused Quartz by Backside Laser-Induced Plasma Ablation Using 248 nm KrF Excimer Laser
Zhao, Yu
Li, Qian
Wang, Zhengfei
Dai, Ziruo
Chen, Tao
APPLIED SCIENCES-BASEL, 2019, 9 (24):
[9] Enhancement of Glass Ablation Rate During Micro-via Processing using Very Long Pulse 248-nm Excimer Laser for Semiconductor Interposer Packaging
Kawasuji, Yasufumi
Suwa, Akira
Adachi, Yasuhiro
Tanaka, Tomonari
Kakizaki, Kouji
Washio, Masakazu
JOURNAL OF LASER MICRO NANOENGINEERING, 2024, 19 (01): : 46 - 50
[10] H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing
Bermundo, Juan Paolo S.
Ishikawa, Yasuaki
Fujii, Mami N.
Ikenoue, Hiroshi
Uraoka, Yukiharu
APPLIED PHYSICS LETTERS, 2017, 110 (13)

← 1 2 3 4 5 →