The Role of SnF2 Additive on Interface Formation in All Lead-Free FASnI3 Perovskite Solar Cells

被引：42

作者：

Zillner, Julia ^{[1
]}

Boyen, Hans-Gerd ^{[2
]}

Schulz, Philip ^{[3
]}

Hanisch, Jonas ^{[1
]}

Gauquelin, Nicolas ^{[4
]}

Verbeeck, Johan ^{[4
]}

Kueffner, Johannes ^{[1
]}

Desta, Derese ^{[2
]}

Eisele, Lisa ^{[1
]}

Ahlswede, Erik ^{[1
]}

Powalla, Michael ^{[1
]}

机构：

[1] Ctr Solar Energy & Hydrogen Res Baden Wurttemberg, Meitnerstr 1, D-70563 Stuttgart, Germany

[2] Hasselt Univ, Inst Mat Res IMO IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium

[3] Ctr Natl Rech Sci, Inst Photovolta Ile de France, 18 Blvd Thomas Gobert, F-91120 Palaiseau, France

[4] Univ Antwerp, Electron Microscopy Mat Res EMAT, Groenenborgerlaan 171, B-2020 Antwerp, Belgium

来源：

ADVANCED FUNCTIONAL MATERIALS | 2022年 / 32卷 / 28期

关键词：

hard X-ray photoelectron spectroscopy; poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate); Sn-based perovskite solar cells; SnF2; additives; SnS interlayer; time-of-flight secondary ion mass spectrometry; TIN-BASED PEROVSKITE; HOLE TRANSPORT LAYER; OXIDE; STABILITY; PERFORMANCE; EFFICIENT; CHARGE;

D O I：

10.1002/adfm.202109649

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tin-based perovskites are promising alternative absorber materials for leadfree perovskite solar cells but need strategies to avoid fast tin (Sn) oxidation. Generally, this reaction can be slowed down by the addition of tin fluoride (SnF2) to the perovskite precursor solution, which also improves the perovskite layer morphology. Here, this work analyzes the spatial distribution of the additive within formamidinium tin triiodide (FASnI(3)) films deposited on top of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transporting layers. Employing time-of-flight secondary ion mass spectrometry and a combination of hard and soft X-ray photoelectron spectroscopy, it is found that Sn F2 preferably accumulates at the PEDOT:PSS/perovskite interface, accompanied by the formation of an ultrathin SnS interlayer with an effective thickness of approximate to 1.2 nm.

引用

页数：9

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