A comparison of ferroelectric properties of sol-gel PLT films on different electrodes

Sol-gel ferroelectric thin films of PLT [(PbxLay)TiO3, x/y = 83/17, x + 1.5y = 1] were prepared by spin coating on ITO, SnO2 and Pt substrates. The properties of PLT films after rapid thermal annealing (RTA) were tested by X-ray Diffraction (XRD) for orientation of crystallization, and by RT66A for ferroelectric hysteresis loops, remnant polarization, switching characteristics, leakage current density and fatigue property. The results show that sol-gel PLT films can crystallize properly based on the above three substrates. Compared with PLT films on Pt substrates, the leakage current density of PLT films on ITO and SnO2 substrates was about one order higher, but the remnant polarization was greater and the fatigue property was obviously better.