Reconfigurable package integrated 20W RF power GaN HEMT with discrete thick-film MIM BST varactors

被引：5

作者：

Preis, S. ^{[1
]}

Wiens, A. ^{[2
]}

Maune, H. ^{[2
]}

Heinrich, W. ^{[1
]}

Jakoby, R. ^{[2
]}

Bengtsson, O. ^{[1
]}

机构：

[1] Leibniz Inst Hoechstfrequenztech, Ferdinand Braun Inst, Gustav Kirchoff Str 4, D-12489 Berlin, Germany

[2] Tech Univ Darmstadt, Inst Mikrowellentech & Photon, Darmstadt, Germany

来源：

ELECTRONICS LETTERS | 2016年 / 52卷 / 04期

关键词：

software radio; high electron mobility transistors; MIM devices; varactors; gallium compounds; III-V semiconductors; wide band gap semiconductors; barium compounds; strontium compounds; thick film capacitors; gallium nitride high-electron-mobility transistor; reconfigurable package integrated radio frequency; discrete thick-film metal-insulator-metal barium-strontium-titanate varactor; electronically two-dimensional reconfigurable L-section matching network; load impedance tunability; tuneable module; field simulation; large-signal model; power added efficiency; output power; metal-insulator-metal BST varactor; power; 20; W; 9; GaN-Ba0; 8Sr0; 2TiO(3);

D O I：

10.1049/el.2015.4109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel package integrated solution for gallium nitride high-electron-mobility transistors with an electronically two-dimensional reconfigurable L-section matching network is presented. Thick-film barium-strontium-titanate (BST) varactors are used to realise a tunability of the load impedance of 1:2 in resistive and 1:1.5 in reactive parts, respectively, applying tuning voltages of up to 200 V. The tuneable module achieves a peak output power of 43.2 dBm (20.9 W). Comparison with simulated results using field simulations and a large-signal model shows good agreement in terms of output power and power added efficiency and thus proves the concept of using metal-insulator-metal BST varactors for reconfigurability.

引用

页码：296 / 297

页数：2

共 2 条

[1] Thick-Film MIM BST Varactors for GaN Power Amplifiers with Discrete Dynamic Load Modulation
Preis, Sebastian
Kienemund, Daniel
Wolff, Nikolai
Maune, Holger
Jakoby, Rolf
Heinrich, Wolfgang
Bengtsson, Olof
2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 277 - 280
[2] Reconfigurable Packaged GaN Power Amplifier Using Thin-Film BST Varactors
Preis, Sebastian
Lenze, Felix
Wiens, Alex
Jakoby, Rolf
Heinrich, Wolfgang
Bengtsson, Olof
2017 47TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2017, : 140 - 143

← 1 →