Distribution of Te in GaSb grown by Bridgman technique under microgravity

被引:10
作者
Nakamura, T
Nishinaga, T
Ge, P
Huo, C
机构
[1] Univ Tokyo, Dept Elect Engn, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
关键词
microgravity; Bridgman growth; GaSb; Te; photoluminescence; Marangoni flow;
D O I
10.1016/S0022-0248(99)00786-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Te concentration in GaSb grown under microgravity was measured by spatially resolved photoluminescence (SRPL). For this purpose, a calibration curve is experimentally obtained to give a relationship between Te concentration and PL energy. It was found that after the growth starts the Te concentration drops at the melted and unmelted interface and recovers rapidly to the level of the initial concentration which means that the distribution is close to that of pure diffusion control. Three possible shapes of the GaSb melt in space were postulated and it is suggested that a wide free surface existed on the GaSb melt during growth. The reason for the absence of strong Marangoni flow is attributed to either the small temperature difference across the free surface or to the presence of a thin oxide film on the melt. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:441 / 445
页数:5
相关论文
共 4 条
  • [1] CHERNOV AA, 1984, CRYSTALLOGRAPHYA, V29, P370
  • [2] DOPANT SEGREGATION IN EARTH-GROWN AND SPACE-GROWN INP CRYSTALS
    DANILEWSKY, AN
    OKAMOTO, Y
    BENZ, KW
    NISHIAGA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (07): : 2195 - 2201
  • [3] Melt growth of striation and etch pit free GaSb under microgravity
    Nishinaga, T
    Ge, P
    Huo, C
    He, J
    Nakamura, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 96 - 100
  • [4] CRYSTAL-GROWTH AND STEADY-STATE SEGREGATION UNDER ZERO GRAVITY - INSB
    WITT, AF
    GATOS, HC
    LICHTENSTEIGER, M
    LAVINE, MC
    HERMAN, CJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (02) : 276 - 283