GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy

被引：1

作者：

Zhang, Z. Y. ^{[1
]}

Scurtescu, C. ^{[1
]}

Taschuk, M. T. ^{[1
]}

Tsui, Y. Y. ^{[1
]}

Fedosejevs, R. ^{[1
]}

Blumin, M. ^{[2
]}

Saveliev, I. ^{[2
]}

Yang, S. ^{[2
]}

Ruda, H. E. ^{[2
]}

机构：

[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada

[2] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E4, Canada

来源：

PHOTONICS NORTH 2006, PTS 1 AND 2 | 2006年 / 6343卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

quantum-dot; semiconductor saturable absorber mirror; molecular beam epitaxy (MBE); distributed brag reflector (DBR);

D O I：

10.1117/12.707736

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A Quantum-dot saturable absorber mirror (QD-SAM) has been fabricated by the molecular beam epitaxy (MBE) technique. Preliminary measurements show that our QD-SAM is a very promising candidate for passive mode-locking a fiber laser or a solid state laser with wavelength in the range of 970-1090nm. The 22%similar to 33% dips in the reflectivity spectrum are observed, which are attributed to quantum dot absorption, indicating the potential for a large modulation depth and hence generation of ultra-short laser pulses through mode-locking.

引用

页数：11

共 6 条

[1]

HERDA R, 2006, IEEE PHOTONIC TECH L, V18, P1

[2] Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer [J].

Liu, HY ;

Sellers, IR ;

Badcock, TJ ;

Mowbray, DJ ;

Skolnick, MS ;

Groom, KM ;

Gutiérrez, M ;

Hopkinson, M ;

Ng, JS ;

David, JPR ;

Beanland, R .

APPLIED PHYSICS LETTERS, 2004, 85 (05) :704-706

[3] 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA [J].

Mukai, K ;

Nakata, Y ;

Otsubo, K ;

Sugawara, M ;

Yokoyama, N ;

Ishikawa, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (10) :1205-1207

[4]

RAFAILOV EU, 2004, IEEE PHOTONIC TECH L, V16, P11

[5] InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm [J].

Su, KW ;

Lai, HC ;

Li, A ;

Chen, YF ;

Huang, KE .

OPTICS LETTERS, 2005, 30 (12) :1482-1484

[6] Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots [J].

Zhang, L ;

Boggess, TF ;

Deppe, DG ;

Huffaker, DL ;

Shchekin, OB ;

Cao, C .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1222-1224

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