Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions

被引：20

作者：

Bian, Jieyu ^{[1
]}

Zhang, Liping ^{[1
]}

Guo, Wanwu ^{[2
]}

Wang, Dongliang ^{[2
]}

Meng, Fanying ^{[1
]}

Liu, Zhengxin ^{[1
]}

机构：

[1] Chinese Acad Sci, SIMIT, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China

[2] SKL PVST, Changzhou 213031, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 06期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

RECOMBINATION; SURFACE; OXIDE;

D O I：

10.7567/APEX.7.065504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To improve the passivation effect at a-Si:H/c-Si interface in heterojunction (HJ) solar cells, ultrathin SiOx layers with a thickness of approximately 2nm were pre-formed on c-Si surfaces in chemical solutions. It was demonstrated that the SiOx layers pre-formed in hot de-ionized water and hydrochloric acid solutions improve effective carrier lifetime, and it is further enhanced through a post annealing process. When the thin SiOx layers were applied to HJ solar cells, increase in both V-oc and J(sc) was achieved, implying the improved interface quality for these HJ solar cells, as compared with the reference without the SiOx layer. (C) 2014 The Japan Society of Applied Physics

引用

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