High Energy Storage Performance in Ba0.85Ca0.15Zr0.1Ti0.9O3-ZnO Hybrid Perovskite Solid Solution Thin Films

被引：5

作者：

Zhang, Xiaoyu ^{[1
,2
,3
]}

Jiao, Peijie ^{[1
,2
,3
]}

Cheng, Hao ^{[1
,2
,3
]}

Xiong, Ke ^{[4
]}

Yang, Jiangfeng ^{[1
,2
,3
]}

Chen, Lan ^{[1
,2
,3
]}

Zhou, Jinfeng ^{[5
]}

Zhu, Zimeng ^{[6
]}

Zhang, Ji ^{[7
]}

Luo, Jin ^{[5
]}

Wang, Jing ^{[8
]}

Yang, Yurong ^{[1
,2
,3
]}

Zhang, Shan-Tao ^{[1
,2
,3
]}

Wu, D. ^{[1
,2
,3
]}

Liu, Jun-Ming ^{[9
]}

机构：

[1] Nanjing Univ, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Jiangsu Key Lab Artificial Funct Mat, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China

[5] Nanjing Tech Univ, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R China

[6] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[7] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Peoples R China

[8] Nanjing Univ Aeronaut & Astronaut, Coll Aerosp Engn, State Key Lab Mech & Control Mech Struct, Nanjing 210016, Peoples R China

[9] Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2022年 / 8卷 / 09期

基金：

国家重点研发计划;

关键词：

energy storage; hybrid perovskite solid solution; relaxor ferroelectric; thin films; THERMAL-STABILITY; DENSITY; CAPACITORS; BATIO3;

D O I：

10.1002/aelm.202200243

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Relaxor property plays a key role in determining energy storage performance of dielectric capacitor. The usual method to improve relaxor property is to form substitutional solid solution. Here an unusually substitutional and interstitial hybrid perovskite solid solution 0.8(Ba0.85Ca0.15Zr0.1Ti0.9O3)-0.2ZnO (BCZT:Zn) is designed, where one Zn2+ occupies B-site and two Zn2+ share one A-site of perovskite structure, and fabricated its epitaxial thin films. Compared to BCZT films, BCZT:Zn films have increased c/a ratio which leads to enhanced maximum polarization P-max, wide band gap therefore high electrical breakdown strength E-BDS, and enhanced relaxor degree thus suppressed remanent polarization P-r. As the results, dramatically improve energy storage property with the recoverable energy storage density W-rec of 75.9 J cm(-3) and the energy storage efficiency eta of 76.7% are obtained in BCZT:Zn films. This work not only provides a high performance relaxor ferroelectric material, but also impacts some new thinking to optimize die/ferro/piezoelectric properties by forming hybrid solid solutions.

引用

页数：9

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