Enhanced dielectric properties of Ba(Ti, Sn)O3 lead-free ceramics by Bi(Zn0.5Ti0.5)O3 substitution

The (1-x)Ba(Ti, Sn)O-3 -xBi(Zn0.5Ti0.5)O-3 lead-free ceramics with x = 0, 0.025, 0.05, 0.075 and 0.1 were prepared by the reaction sintering method. The effects of Bi(Zn0.5Ti0.5)O-3 substitution on the densification, phase structure, microstructure and electrical properties of Ba(Ti, Sn)O-3 ceramics were investigated. The results showed that the highest density of 6.22 +/- 0.04 g/cm(3) was achieved in x = 0.1 composition. The crystal structure was found to change from tetragonal in x = 0 composition to cubic at x 0.025. The room-temperature dielectric constant reaching to 39,560 (1 kHz) with low dielectric loss was achieved in ceramic with x = 0.025. The grain size and Curie temperature were significantly decreased when Bi(Zn0.5Ti0.5)O-3 content increased. The AC complex impedance spectroscopy technique was also used to obtain the electrical parameters of (1-x)Ba(Ti, Sn)O-3 -xBi(Zn0.5Ti0.5)O-3 ceramics. As a result, adding Bi(Zn0.5Ti0.5)O-3 is an effective way to enhance the densification and dielectric properties of Ba(Ti, Sn)O-3 ceramics.