Determination of strain fields on two-dimensional images using the STC method

被引:1
作者
Chang, Wonjae [1 ]
机构
[1] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
关键词
STC method; Geometric phase analysis; Strain analysis; HRTEM; HAADF-STEM; TRANSMISSION ELECTRON-MICROSCOPY; QUANTUM; LAYERS; HETEROSTRUCTURES;
D O I
10.1016/j.commatsci.2019.03.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, a novel method called the Strain Tensor using Computational Fourier transform moire (STC) method is proposed to obtain strain maps in a 2D lattice image such as an HRTEM or HAADF-STEM image. The method is a modification of the CFTM method, but it has two essential merits. Firstly, the method provides a 2x2 strain tensor using two independent Bragg peaks, and can hence be used to calculate both the axial and shear components, whereas the CFTM method can be used to calculate only the axial strain. Secondly, the STC method can provide more reliable results than the CFTM method by excluding the weak Bragg peaks of low signal/noise ratio on a digital diffractogram. In addition, the STC method is better than the GPA method because it does not require an unwrapping process. In this work, the STC method is demonstrated using a computer-generated image, showing that the method matches exactly with the CFTM method. Furthermore, the results for an experimental image reveal that the STC method can be an alternative method for strain analysis when the CFTM method cannot provide reliable results owing to weak Bragg peaks of low signal/noise ratio.
引用
收藏
页码:153 / 157
页数:5
相关论文
共 26 条
[11]   Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy [J].
Hytch, MJ ;
Putaux, JL ;
Pénisson, JM .
NATURE, 2003, 423 (6937) :270-273
[12]   AN APPROACH TO QUANTITATIVE HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF CRYSTALLINE MATERIALS [J].
KISIELOWSKI, C ;
SCHWANDER, P ;
BAUMANN, FH ;
SEIBT, M ;
KIM, Y ;
OURMAZD, A .
ULTRAMICROSCOPY, 1995, 58 (02) :131-155
[13]   Atomic structure of "W'-type quantum well heterostructures investigated by aberration-corrected STEM [J].
Kuekelhan, P. ;
Beyer, A. ;
Fuchs, C. ;
Weseloh, M. J. ;
Koch, S. W. ;
Stolz, W. ;
Volz, K. .
JOURNAL OF MICROSCOPY, 2017, 268 (03) :259-268
[14]   Enhanced output power of InGaAs/GaAs infrared light-emitting diode with GaxIn1-xP tensile strain barrier [J].
Lee, Hyung-Joo ;
Jang, In-Kyu ;
An, Won-Chan ;
Kwac, Lee Ku ;
Kim, Hong-Gun ;
Kwak, Joon Seop .
CURRENT APPLIED PHYSICS, 2017, 17 (12) :1582-1588
[15]   Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells [J].
Mols, Y. ;
Leys, M. R. ;
Simons, E. ;
Poortmans, J. ;
Borghs, G. .
JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) :758-761
[16]   Investigating the effect of silicon thickness on ultra-thin silicon on insulator as a compliant substrate for gallium arsenide heteroepitaxial growth [J].
Noh, Shinyoung ;
Hao, Xiaojing ;
Liu, Ziheng ;
Green, Martin A. ;
Lee, Sammy ;
Ho-Baillie, Anita .
THIN SOLID FILMS, 2018, 653 :371-376
[17]   QUANTIFYING THE INFORMATION-CONTENT OF LATTICE IMAGES [J].
OURMAZD, A ;
TAYLOR, DW ;
BODE, M ;
KIM, Y .
SCIENCE, 1989, 246 (4937) :1571-1577
[18]   Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy [J].
Quintana, C ;
Golmayo, D ;
Dotor, ML ;
Lancin, M .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 25 (03) :159-168
[19]   DETERMINATION OF ELASTIC STRAINS IN EPITAXIAL LAYERS BY HREM [J].
ROBERTSON, MD ;
CURRIE, JE ;
CORBETT, JM ;
WEBB, JB .
ULTRAMICROSCOPY, 1995, 58 (02) :175-184
[20]  
Rosenauer A, 1997, OPTIK, V105, P99