In this paper, a novel method called the Strain Tensor using Computational Fourier transform moire (STC) method is proposed to obtain strain maps in a 2D lattice image such as an HRTEM or HAADF-STEM image. The method is a modification of the CFTM method, but it has two essential merits. Firstly, the method provides a 2x2 strain tensor using two independent Bragg peaks, and can hence be used to calculate both the axial and shear components, whereas the CFTM method can be used to calculate only the axial strain. Secondly, the STC method can provide more reliable results than the CFTM method by excluding the weak Bragg peaks of low signal/noise ratio on a digital diffractogram. In addition, the STC method is better than the GPA method because it does not require an unwrapping process. In this work, the STC method is demonstrated using a computer-generated image, showing that the method matches exactly with the CFTM method. Furthermore, the results for an experimental image reveal that the STC method can be an alternative method for strain analysis when the CFTM method cannot provide reliable results owing to weak Bragg peaks of low signal/noise ratio.
机构:
Univ Illinois, Dept Chem Engn, 810 South Clinton St, Chicago, IL 60607 USA
Argonne Natl Lab, Ctr Nanoscale Mat, 9700 South Cass Ave, Argonne, IL 60439 USAUniv Illinois, Dept Chem Engn, 810 South Clinton St, Chicago, IL 60607 USA
Deng, Shikai
Sumant, Anirudha V.
论文数: 0引用数: 0
h-index: 0
机构:
Argonne Natl Lab, Ctr Nanoscale Mat, 9700 South Cass Ave, Argonne, IL 60439 USAUniv Illinois, Dept Chem Engn, 810 South Clinton St, Chicago, IL 60607 USA
Sumant, Anirudha V.
Berry, Vikas
论文数: 0引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Chem Engn, 810 South Clinton St, Chicago, IL 60607 USAUniv Illinois, Dept Chem Engn, 810 South Clinton St, Chicago, IL 60607 USA
机构:
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090
Novosibirsk State University, Novosibirsk, 630090Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090
Nenashev A.V.
Koshkarev A.A.
论文数: 0引用数: 0
h-index: 0
机构:
Novosibirsk State University, Novosibirsk, 630090Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090
Koshkarev A.A.
Dvurechenskii A.V.
论文数: 0引用数: 0
h-index: 0
机构:
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090
Novosibirsk State University, Novosibirsk, 630090Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090