Short-circuit Failure Mechanism of SiC Double-trench MOSFET

被引：0

作者：

Hu, Dongqing ^{[1
]}

Xia, Tian ^{[1
]}

Zhou, Xintian ^{[1
]}

Jia, Yunpeng ^{[1
]}

Wu, Yu ^{[1
]}

Yin, Shan ^{[2
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

[2] China Acad Engn Phys, Inst Elect Engn, Mianyang, Sichuan, Peoples R China

来源：

PROCEEDINGS OF 2020 IEEE 5TH INFORMATION TECHNOLOGY AND MECHATRONICS ENGINEERING CONFERENCE (ITOEC 2020) | 2020年

关键词：

Silicon Carbide double-trench MOSFET; power semiconductor reliability; short-circuit;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The purpose of this paper is to explore the failure mechanism of 650V state-of-the-art SiC double-trench MOSFETs under short-circuit (SC) test. The experimental results demonstrate drain voltage (VDS) has a pronounced influence on the SC capability of the device, and different VDS will lead to discrepant failure mechanisms. The gate-to-source oxide rupture is most likely to occur when a lower VDS is imposed on the studied device. However, the breakdown of the gate-to-source and drain-to-source takes place simultaneously with a higher VDS. And the reason will be discussed in this work.

引用

页码：696 / 699

页数：4

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