Short-circuit Failure Mechanism of SiC Double-trench MOSFET

The purpose of this paper is to explore the failure mechanism of 650V state-of-the-art SiC double-trench MOSFETs under short-circuit (SC) test. The experimental results demonstrate drain voltage (VDS) has a pronounced influence on the SC capability of the device, and different VDS will lead to discrepant failure mechanisms. The gate-to-source oxide rupture is most likely to occur when a lower VDS is imposed on the studied device. However, the breakdown of the gate-to-source and drain-to-source takes place simultaneously with a higher VDS. And the reason will be discussed in this work.