Dose-rate dependence of radiation induced interface trap density in silicon bipolar transistors

被引：14
作者：
Hjalmarson, H. P.
Pease, R. L.
Hembree, C. E.
Van Ginhoven, R. M.
Schultz, P. A.
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] RLP Res, Los Lunas, NM 87031 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 250卷 / 1-2 SPEC. ISS.期
关键词：
silicon dioxide; ionizing radiation; hydrogen; interface traps; fixed charge; ELDRS;
D O I：
10.1016/j.nimb.2006.04.122
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The key effects of ionizing radiation on silicon dioxide are described and computed. Inclusion of bimolecular electron-hole recombination is shown to produce a saturation of fixed charge at high total dose and to a reduction in interface trap density at high dose-rates. These results can explain the enhanced low dose rate sensitivity (ELDRS) phenomenon. These results also predict a new dose-rate dependence at very high dose rates. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：269 / 273
页数：5
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