Electroluminescence from erbium and oxygen coimplanted GaN

被引：65

作者：

Torvik, JT

Feuerstein, RJ

Pankove, JI

Qiu, CH

Namavar, F

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

[2] ASTRALUX INC,BOULDER,CO 80301

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 14期

关键词：

D O I：

10.1063/1.116892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal-insulator-n-type) diodes is demonstrated. Erbium related electroluminescence at lambda=1.54 mu m was detected under reverse bias after a postimplant anneal at 800 degrees C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on applied reverse drive current. (C) 1996 American Institute of Physics.

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页码：2098 / 2100

页数：3

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