Defect-related local-electric-field impact on p-n junction parameters

被引：17
|
作者：
Czerwinski, A [1 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 25期
关键词：
D O I：
10.1063/1.125510
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method is proposed to accurately determine the electric-field impact on a p-n junction. The generation current component is separated from the total leakage current, with correction for the reverse-bias-dependent diffusion current. The sources of the electric-field enhancement are considered. The type of the dominant center, its distribution and energy, the local electric field due to imperfections, and the mechanical stress are determined. (C) 1999 American Institute of Physics. [S0003-6951(99)03051-X].
引用
收藏
页码：3971 / 3973
页数：3
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