Effect of Crystallinity on Thermal Transport in Textured Lead Zirconate Titanate Thin Films

被引:10
作者
Varghese, Ronnie [1 ]
Harikrishna, Hari [2 ]
Huxtable, Scott T. [3 ]
Reynolds, W. T., Jr. [1 ]
Priya, Shashank [4 ]
机构
[1] Virginia Tech, Dept Mat Sci, Blacksburg, VA 24061 USA
[2] Virginia Tech, Dept Engn Sci & Mech, Blacksburg, VA 24061 USA
[3] Virginia Tech, Dept Mech Engn, Blacksburg, VA 24061 USA
[4] Virginia Tech, Ctr Energy Harvesting Mat & Syst CEHMS, Bioinspired Mat & Devices Lab BMDL, Blacksburg, VA 24061 USA
关键词
thin films; thermal conductivity; thermal conductance; interface properties; texturing; SOL-GEL DEPOSITION; CONDUCTIVITY; CRYSTALLIZATION; ORIENTATION; CERAMICS; PHASE; LAYER; MEMS;
D O I
10.1021/am500482r
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We demonstrate the use of the time domain thermoreflectance (TDTR) technique towards understanding thermal transport in textured Pb(Zr,Ti)O-3 (PZT) thin films grown by a sol-gel process on platinized silicon substrates. PZT films were grown with preferred crystallographic orientations of (100), (110), and (111). Grain orientation was controlled by manipulating the heterogeneous nucleation and growth characteristics at the interface between the film and the underlying Pt layer on the substrate. TDTR was used to measure both the PZT film thermal conductivity and the interface thermal conductance between the PZT and Pt as well as that between the PZT and an Al thermoreflectance layer evaporated on the PZT surface. We find a hierarchical dependence of thermal conductivity on the crystallographic orientation of the PZT films and observed differences in the thermal conductances between the Al-PZT and PZT-Pt interfaces for a varying degree of preferred orientations (100), (110), and (111). Thus, the technique based upon nanoscale thermal measurements can be used to delineate PZT samples with different crystallographic orientations. The thermal conductivities of the PZT films with different crystal orientations were in the range of 1.45-1.80 W m(-1) K-1. The interface thermal conductance between the PZT and Pt layer was in the range of 30-65 MW m(-2) K-1, while the conductance between the Al layer and PZT was in the range of 90-120 MW m(-2) K-1. These interfacial conductances exhibit significant correlations to the texture of the PZT film and elemental concentration and densities at those interfaces.
引用
收藏
页码:6748 / 6756
页数:9
相关论文
共 42 条
  • [1] [Anonymous], 2008, APPL PHYS LETT, V93
  • [2] EFFECTS OF TITANIUM BUFFER LAYER ON LEAD-ZIRCONATE-TITANATE CRYSTALLIZATION PROCESSES IN SOL-GEL DEPOSITION TECHNIQUE
    AOKI, K
    FUKUDA, Y
    NUMATA, K
    NISHIMURA, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01): : 192 - 195
  • [3] ORIENTATION OF RAPID THERMALLY ANNEALED LEAD-ZIRCONATE-TITANATE THIN-FILMS ON (111) PT SUBSTRATES
    BROOKS, KG
    REANEY, IM
    KLISSURSKA, R
    HUANG, Y
    BURSILL, L
    SETTER, N
    [J]. JOURNAL OF MATERIALS RESEARCH, 1994, 9 (10) : 2540 - 2553
  • [4] Nanoscale thermal transport
    Cahill, DG
    Ford, WK
    Goodson, KE
    Mahan, GD
    Majumdar, A
    Maris, HJ
    Merlin, R
    Phillpot, SR
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 793 - 818
  • [5] Analysis of heat flow in layered structures for time-domain thermoreflectance
    Cahill, DG
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (12) : 5119 - 5122
  • [6] Thermometry and thermal transport in micro/nanoscale solid-state devices and structures
    Cahill, DG
    Goodson, KE
    Majumdar, A
    [J]. JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2002, 124 (02): : 223 - 241
  • [7] TEMPERATURE-TIME TEXTURE TRANSITION OF PB(ZR1-XTIX)O-3 THIN-FILMS .1. ROLE OF PB-RICH INTERMEDIATE PHASES
    CHEN, SY
    CHEN, IW
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (09) : 2332 - 2336
  • [8] Thermal conductance of epitaxial interfaces
    Costescu, RM
    Wall, MA
    Cahill, DG
    [J]. PHYSICAL REVIEW B, 2003, 67 (05)
  • [9] Optical pump-and-probe measurement of the thermal conductivity of nitride thin films
    Daly, BC
    Maris, HJ
    Nurmikko, AV
    Kuball, M
    Han, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) : 3820 - 3824
  • [10] Influence of crystallographic orientation and anisotropy on Kapitza conductance via classical molecular dynamics simulations
    Duda, J. C.
    Kimmer, C. J.
    Soffa, W. A.
    Zhou, X. W.
    Jones, R. E.
    Hopkins, P. E.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (09)