Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films

被引：22
作者：
Park, Jin-Seong
Kang, Sang-Won
Kim, H.
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 03期
关键词：
D O I：
10.1116/1.2198846
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from TiCl4, SiH4, and N-2/H-2/Ar plasma at 350 degrees C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from TiCl4. The effects of growth parameters on film properties were studied. Especially, the changes in sequences of precursor-reactant exposure steps were found to produce large change in the growth rates and Si concentration in the films. The results are discussed based upon the molecule-surface reaction mechanisms. Also, the Cu diffusion barrier properties of the PEALD Ti-Si-N films were investigated. PEALD Ti-Si-N films have shown better diffusion barrier properties than PEALD TiN films and can be a promising candidate for future Cu interconnect technology beyond 65 nm technology node.] (c) 2006 American Vacuum Society.
引用
收藏
页码：1327 / 1332
页数：6
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