Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

被引：6
作者：
Huang, Dong-Hai
Hsu, Wei-Chou
Lin, Yu-Shyan
Wu, Yue-Huei
Hsu, Rong-Tay
Huang, Juin-Chin
Liao, Yin-Kai
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Shoufeng 974, Hualien, Taiwan
[3] Land Mark Optoelect Corp 1, Tainan 710, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 06期
关键词：
D O I：
10.1088/0268-1242/21/6/012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InP-based InAlAs/InxGa1-xAs/InP high-electron-mobility transistors (HEMTs) with a symmetrically graded channel (SGC-HEMT) and an inversely graded channel (IGC-HEMT) were fabricated and studied. The SGC-HEMT exhibits better Hall, dc and RF characteristics than the IGC-HEMT because there are more electrons accumulated in the symmetrically graded channel. However, the IGC-HEMT has better thermal stability than the SGC-HEMT because the former has higher bandgap discontinuity at the channel/buffer heterojunction and less Coulomb scattering from a d-doped layer. Furthermore, the IGC-HEMT sustains larger output power than the SGC-HEMT attributed to better breakdown characteristics. Therefore, HEMTs with the symmetrically graded and an inversely graded channel are suitable for high-speed and high-power applications, respectively.
引用
收藏
页码：781 / 785
页数：5
相关论文
共 16 条
[1]   High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In 0.49P pseudomorphic heterostructure transistors [J].
Chang, WL ;
Pan, HJ ;
Wang, WC ;
Thei, KB ;
Yu, KH ;
Lin, KW ;
Cheng, CC ;
Lour, WS ;
Liu, WC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (01) :1-6
[2]   Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistors [J].
Chen, HR ;
Chen, WT ;
Hsu, MK ;
Tan, SW ;
Lour, WS .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (09) :932-937
[3]   Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor [J].
Chen, YJ ;
Lee, CS ;
Wang, TB ;
Hsu, WC ;
Chen, YW ;
Su, KH ;
Wu, CL .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08) :5903-5908
[4]   InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations [J].
Chen, YJ ;
Hsu, WC ;
Chen, YW ;
Lin, YS ;
Hsu, RT ;
Wu, YH .
SOLID-STATE ELECTRONICS, 2005, 49 (02) :163-166
[5]   Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels [J].
Chen, YW ;
Hsu, WC ;
Hsu, RT ;
Wu, YH ;
Chen, YJ .
SOLID-STATE ELECTRONICS, 2004, 48 (01) :119-124
[6]   Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs) [J].
Chuang, HM ;
Cheng, SY ;
Lai, PH ;
Liao, XD ;
Chen, CY ;
Yen, CH ;
Liu, RC ;
Liu, WC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (01) :87-92
[7]   Characteristics of In0.425Al0.575As-InxGa1-x as metamorphic HEMTs with pseudomorphic and symmetrically graded channels [J].
Hsu, WC ;
Chen, YJ ;
Lee, CS ;
Wang, TB ;
Huang, JC ;
Huang, DH ;
Su, KH ;
Lin, YS ;
Wu, CL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (06) :1079-1086
[8]   ON THE IMPROVEMENT OF GATE VOLTAGE SWINGS IN DELTA-DOPED GAAS/INXGA1-XAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES [J].
HSU, WC ;
SHIEH, HM ;
KAO, MJ ;
HSU, RT ;
WU, YH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (09) :1630-1635
[9]   Fabrication and characteristics of 0.12 μm AlGaAs/InGaAs/GaAs pseudomorphic HEMT using a silicon nitride assisted process [J].
Lim, JW ;
Ahn, HK ;
Ji, HG ;
Chang, WJ ;
Mun, JK ;
Kim, HC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (12) :1416-1421
[10]   Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage [J].
Lin, YS ;
Sun, TP ;
Lu, SS .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (04) :150-153
12