Fe-diffusion-induced defects in InP annealed in iron phosphide ambient

被引：10

作者：

Zhao, YW ^{[1
]}

Dong, HW

Jiao, JH

Zhao, JQ

Lin, LY

机构：

[1] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 4A期

关键词：

indium phosphide; annealing; semi-insulating; defect; diffusion;

D O I：

10.1143/JJAP.41.1929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.

引用

页码：1929 / 1931

页数：3