Fe-diffusion-induced defects in InP annealed in iron phosphide ambient

被引：10
|
作者：
Zhao, YW [1 ]
Dong, HW
Jiao, JH
Zhao, JQ
Lin, LY
机构：
[1] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 4A期
关键词：
indium phosphide; annealing; semi-insulating; defect; diffusion;
D O I：
10.1143/JJAP.41.1929
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.
引用
收藏
页码：1929 / 1931
页数：3
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