Thermal annealing effects on the optical and structural properties of (100) GaAs1-xBix layers grown by Molecular Beam Epitaxy

被引：19

作者：

Lemine, O. M. ^{[1
]}

Alkaoud, A. ^{[1
]}

Avanco Galeti, H. V. ^{[2
]}

Gordo, V. Orsi ^{[3
]}

Gobato, Y. Galvao ^{[3
]}

Bouzid, Houcine ^{[4
]}

Hajry, A. ^{[4
]}

Henini, M. ^{[5
]}

机构：

[1] Al Imam Mohammad Ibn Saud Islamic Univ IMSIU, Coll Sci, Dept Phys, Riyadh 11623, Saudi Arabia

[2] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13565905 Sao Carlos, SP, Brazil

[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

[4] Najran Univ, PCSED, Najran 11001, Saudi Arabia

[5] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, England

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2014年 / 65卷

基金：

巴西圣保罗研究基金会;

关键词：

GaAsBi alloys; PL; MBE; XRD; TEM; GAP;

D O I：

10.1016/j.spmi.2013.10.002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of long time thermal annealing at 200 degrees C on the optical and structural properties of GaAs1-xBix alloys were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). FESEM images show that bismuth islands nucleate on the surface and their diameter increases after annealing. It was observed a PL intensity enhancement and a small blue shift in PL peak energy after thermal annealing at 200 degrees C for 3 h of GaAs1-xBix alloys which was associated to the reduction of the density of defects. However these defects are not completed removed by thermal annealing although an important PL intensity improvement is observed. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：48 / 55

页数：8

共 14 条

[1] GaBiAs: A material for optoelectronic terahertz devices [J].

Bertulis, K. ;

Krotkus, A. ;

Aleksejenko, G. ;

Pacebutas, V. ;

Adomavicius, R. ;

Molis, G. ;

Marcinkevicius, S. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[2] Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy [J].

Chine, Z. ;

Fitouri, H. ;

Zaied, I. ;

Rebey, A. ;

El Jani, B. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (06)

[3] Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs-Bismide alloy [J].

Feng, Gan ;

Oe, Kunishige ;

Yoshimoto, Masahiro .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (29-32) :L764-L766

[4] Structural and electronic properties of III-V bismuth compounds [J].

Ferhat, M ;

Zaoui, A .

PHYSICAL REVIEW B, 2006, 73 (11)

[5] Giant spin-orbit bowing in GaAs1-xBix [J].

Fluegel, B. ;

Francoeur, S. ;

Mascarenhas, A. ;

Tixier, S. ;

Young, E. C. ;

Tiedje, T. .

PHYSICAL REVIEW LETTERS, 2006, 97 (06)

[6] The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy [J].

Foxon, CT ;

Harrison, I ;

Novikov, SV ;

Winser, AJ ;

Campion, RP ;

Li, T .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3383-3397

[7] Band gap of GaAs1-xBix, 0<x<3.6% [J].

Francoeur, S ;

Seong, MJ ;

Mascarenhas, A ;

Tixier, S ;

Adamcyk, M ;

Tiedje, T .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3874-3876

[8] Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates [J].

Henini, M. ;

Ibanez, J. ;

Schmidbauer, M. ;

Shafi, M. ;

Novikov, S. V. ;

Turyanska, L. ;

Molina, S. I. ;

Sales, D. L. ;

Chisholm, M. F. ;

Misiewicz, J. .

APPLIED PHYSICS LETTERS, 2007, 91 (25)

[9] Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence [J].

Kudrawiec, R. ;

Syperek, M. ;

Poloczek, P. ;

Misiewicz, J. ;

Mari, R. H. ;

Shafi, M. ;

Henini, M. ;

Gobato, Y. Galvao ;

Novikov, S. V. ;

Ibanez, J. ;

Schmidbauer, M. ;

Molina, S. I. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)

[10] Electron spin dynamics and g-factor in GaAsBi [J].

Mazzucato, S. ;

Zhang, T. T. ;

Carrere, H. ;

Lagarde, D. ;

Boonpeng, P. ;

Arnoult, A. ;

Lacoste, G. ;

Balocchi, A. ;

Amand, T. ;

Fontaine, C. ;

Marie, X. .

APPLIED PHYSICS LETTERS, 2013, 102 (25)

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