High-performance non-volatile resistive switching memory based on a polyimide/graphene oxide nanocomposite

被引：18

作者：

Choi, Ju-Young ^{[1
]}

Lee, Jeongjun ^{[2
]}

Jeon, Jihyun ^{[2
]}

Im, Jaehyuk ^{[2
]}

Jang, Junhwan ^{[2
]}

Jin, Seung-Won ^{[1
]}

Joung, Hyeyoung ^{[1
]}

Yu, Hwan-Chul ^{[1
]}

Nam, Kyeong-Nam ^{[1
]}

Park, Hyeong-Joo ^{[1
]}

Kim, Dong-Min ^{[1
]}

Song, In-Ho ^{[1
]}

Yang, Jaesung ^{[1
]}

Cho, Soohaeng ^{[2
]}

Chung, Chan-Moon ^{[1
]}

机构：

[1] Yonsei Univ, Dept Chem, Wonju 26493, South Korea

[2] Yonsei Univ, Dept Phys, Wonju 26493, South Korea

来源：

POLYMER CHEMISTRY | 2020年 / 11卷 / 48期

基金：

新加坡国家研究基金会;

关键词：

IN-SITU SYNTHESIS; INDIUM-TIN-OXIDE; GRAPHENE OXIDE; DEVICES; MORPHOLOGY; COMPOSITE; CHEMISTRY; MECHANISM;

D O I：

10.1039/d0py01281e

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Graphene oxide (GO) modified with 2,6-diaminoanthracene (AnDA) (GO-AnDA) is prepared and characterized. Poly(amic acid)-GO (PAA-GO) is prepared by the reaction of 4,4 '-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) with AnDA in the presence of GO-AnDA. Polyimide-GO (PI-GO) nanocomposites with different GO contents are prepared by chemical imidization of the PAA-GO, and characterized by Fourier transform infrared (FT-IR) spectroscopy, thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), high resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM) and UV-visible spectroscopy. PI-GOs show high thermal decomposition temperatures around 500 degrees C and glass transition temperatures (T(g)s) around 400 degrees C. Al/PI-GO/ITO memory devices are fabricated using PI-GO films as a resistive active layer. The memory device fabricated with PI-GO film containing 1.5 wt% GO exhibits write-once-read-many-times (WORM) memory behavior with an excellent ON/OFF ratio (similar to 10(8)), long retention time (similar to 10(4) s), good endurance (10(4)th cycle), and an outstanding yield (92%). Post-annealing of the memory device improves the performance of the memory device. The mechanisms associated with the memory effect are explained from electron density difference map (EDDM) calculations. This study demonstrates that the PI-GO nanocomposite is a suitable active material for low-cost solution processing of next-generation nonvolatile memories.

引用

页码：7685 / 7695

页数：11

共 67 条

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