Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN

被引：16

作者：

Anderson, Ryan ^{[1
]}

Cohen, Daniel ^{[1
]}

Mehari, Shlomo ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

DenBaars, Steven ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93107 USA

[2] Univ Calif Santa Barbara, Deparment Elect & Comp Engn, Santa Barbara, CA 93107 USA

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 16期

基金：

美国国家科学基金会;

关键词：

DIODES;

D O I：

10.1364/OE.27.022764

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report observations of lateral mode confinement by a tapering nanoporous-GaN layer in the n-side cladding of a blue-emitting InGaN laser diode grown on the semipolar (20 (2) over bar(1) over bar) plane of bulk GaN. Little additional confinement occurred in the transverse direction, and the nanoporous layer did not serve as a current aperture. Nanoporous-GaN, with Si-doping of 8x10(18) cm(-3) and 20% porosity had a bulk resistivity of 3 Omega-cm and a thermal conductivity of 4 W/m-K, in general agreement with data reported on c-plane VCSEL structures. An excess modal loss of 19 cm(-1) was found. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：22764 / 22769

页数：6

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