Large-Area, Nanometer-Scale Discrete Doping of Semiconductors via Block Copolymer Self-Assembly

被引：23
作者：
Popere, Bhooshan C. [1 ]
Russ, Boris [2 ]
Heitsch, Andrew T. [3 ]
Trefonas, Peter [4 ]
Segalman, Rachel A. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Chem Engn & Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Berkeley, Dept Chem & Biomol Engn, Berkeley, CA 94720 USA
[3] Dow Chem Co USA, Midland, MI 48674 USA
[4] Dow Elect Mat, Marlborough, MA 01752 USA
来源：
ADVANCED MATERIALS INTERFACES | 2015年 / 2卷 / 18期
关键词：
JUNCTION FORMATION; THIN-FILMS; ORDERED ARRAYS; MONOLAYERS; SILICON; MICELLES; MORPHOLOGY; SI;
D O I：
10.1002/admi.201500421
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A novel platform for "nanoconfined" doping of planar semiconductors is based on block copolymer self-assembly. This methodology enables precise control over incorporated dopant positions in all three spatial dimensions on the nanoscopic length scale, along with the local dopant concentration, demonstrating a significant advancement in the ability to confine dopant atoms at the technologically relevant length scale. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页数：6
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共 23 条
  • [1] BORON-DIFFUSION IN SILICON-CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION
    FAIR, RB
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 800 - 805
  • [2] Micellization of strongly segregated block copolymers
    Forster, S
    Zisenis, M
    Wenz, E
    Antonietti, M
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1996, 104 (24) : 9956 - 9970
  • [3] Contact Doping of Silicon Wafers and Nanostructures with Phosphine Oxide Monolayers
    Hazut, Ori
    Agarwala, Arunava
    Amit, Iddo
    Subramani, Thangavel
    Zaidiner, Seva
    Rosenwaks, Yossi
    Yerushalmi, Roie
    [J]. ACS NANO, 2012, 6 (11) : 10311 - 10318
  • [4] Controlled nanoscale doping of semiconductors via molecular monolayers
    Ho, Johnny C.
    Yerushalmi, Roie
    Jacobson, Zachery A.
    Fan, Zhiyong
    Alley, Robert L.
    Javey, Ali
    [J]. NATURE MATERIALS, 2008, 7 (01) : 62 - 67
  • [5] Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing
    Ho, Johnny C.
    Yerushalmi, Roie
    Smith, Gregory
    Majhi, Prashant
    Bennett, Joseph
    Halim, Jeffri
    Faifer, Vladimir N.
    Javey, Ali
    [J]. NANO LETTERS, 2009, 9 (02) : 725 - 730
  • [6] Spin-On Organic Polymer Dopants for Silicon
    Hoarfrost, Megan L.
    Takei, Kuniharu
    Ho, Victor
    Heitsch, Andrew
    Trefonas, Peter
    Javey, Ali
    Segalman, Rachel A.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2013, 4 (21): : 3741 - 3746
  • [7] Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position
    Hori, Masahiro
    Taira, Keigo
    Komatsubara, Akira
    Kumagai, Kuninori
    Ono, Yukinori
    Tanii, Takashi
    Endoh, Tetsuo
    Shinada, Takahiro
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (01)
  • [8] Effects of Annealing Solvents on the Morphology of Block Copolymer-Based Supramolecular Thin Films
    Huang, Wei-Han
    Chen, Po-Yu
    Tung, Shih-Huang
    [J]. MACROMOLECULES, 2012, 45 (03) : 1562 - 1569
  • [9] Siticon device scaling to the sub-10-nm regime
    Leong, M
    Doris, B
    Kedzierski, J
    Rim, K
    Yang, M
    [J]. SCIENCE, 2004, 306 (5704) : 2057 - 2060
  • [10] Ultrashallow depth profiling using SIMS and ion scattering spectroscopy
    Kataoka, Y.
    Itani, T.
    [J]. SURFACE AND INTERFACE ANALYSIS, 2007, 39 (10) : 826 - 831
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