Fluctuation Analysis of Parasitic Resistance in FinFETs With Scaled Fin Thickness

被引：19

作者：

Matsukawa, Takashi ^{[1
]}

Endo, Kazuhiko ^{[1
]}

Ishikawa, Yuki ^{[1
]}

Yamauchi, Hiromi ^{[1
]}

O'uchi, Shinichi ^{[1
]}

Liu, Yongxun ^{[1
]}

Tsukada, Junichi ^{[1
]}

Ishii, Kenichi ^{[1
]}

Sakamoto, Kunihiro ^{[1
]}

Suzuki, Eiichi ^{[1
]}

Masahara, Meishoku ^{[1
]}

机构：

[1] AIST, Nanoelect Res Inst, Ibaraki 3058568, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 04期

关键词：

Doping; extension; FinFET; fluctuation; parasitic resistance; source-drain (S/D);

D O I：

10.1109/LED.2009.2014180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurement-based analysis of the parasitic resistance (R-para) of FinFETs was extended to Investigation of R-para. fluctuation, which could cause severe on-current variation. Rparfo was obtained from the Intercept in the linear relationship between measured on-resistance and gate length for FirtFETs of various dimensions. A significant increase in R-para is observed for fin thickness below 25 nm due to dopant loss from the ultrathin extension during processing. R-para variation was evaluated for 45 FinFETs with an average fin thickness of 16 nm. Significant Rpara variation is observed and correlates with the variation of fin thickness.

引用

页码：407 / 409

页数：3

共 12 条

[1]

[Anonymous], IEDM

[2] Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions [J].