Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots

被引：27

作者：

Gogneau, N

Fossard, F

Monroy, E

Monnoye, S

Mank, H

Daudin, B

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, Equipe CEA CNRS UJF Nanophys & Semicond, F-38054 Grenoble 9, France

[2] NOVASIC Savoie Technolac, F-73375 Le Bourget du Lac, France

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 21期

关键词：

D O I：

10.1063/1.1755840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the effect of vertical correlation on GaN/AlN quantum dots grown by plasma-assisted molecular-beam epitaxy using the modified Stranski-Krastanow growth mode. When increasing the number of GaN periods, we observe a homogenization of the island distribution and a redshift of the luminescence line. This redshift is attributed to an increase of the quantum Stark effect due to the increase of the piezoelectric contribution to the internal electric field. (C) 2004 American Institute of Physics.

引用

页码：4224 / 4226

页数：3

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