Stimulated Raman scattering in silicon waveguides

被引：39
作者：
Claps, R [1 ]
Dimitropoulos, D [1 ]
Jalali, B [1 ]
机构：
[1] Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 22期
关键词：
D O I：
10.1049/el:20020931
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The use of the Raman effect in silicon to create optical amplification in silicon-on-insulator waveguides is investigated. The analysis shows that when using stimulated Raman scattering, it is possible to achieve up to 10 dB of signal gain in optically pumped silicon waveguides with lengths < 2 cm.
引用
收藏
页码：1352 / 1354
页数：3
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