Structure and microwave dielectric properties of BaAl2-2xLi2xSi2O8-2x ceramics

被引:19
|
作者
Li, Chao [1 ]
Ding, Shihua [1 ]
Song, Tianxiu [1 ]
Zhang, Yun [1 ]
Zhu, Hui [1 ]
机构
[1] Xihua Univ, Sch Mat Sci & Engn, Chengdu 610039, Peoples R China
基金
中国国家自然科学基金;
关键词
BAS; Celsian; Oxygen vacancies; Dielectric properties; BOND-VALENCE; CELSIAN BAAL2SI2O8; SINTERING BEHAVIOR; CRYSTAL-STRUCTURE; TRANSFORMATION; STRENGTH; KINETICS; OXIDES; BA; CA;
D O I
10.1016/j.ceramint.2020.10.062
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
BaAl2-2xLi2xSi2O8-2x = 0, 0.005, 0.0075, 0.01, 0.02, 0.03) ceramics were synthesized by solid-state sintering method. Based on density functional theory, the first-principle calculations provided by the Cambridge Sequential Total Energy Package (CASTEP) software were introduced to the BaAl2Si2O8 (BAS) system. In an effort to confirm the site occupied by Li+, we discussed the formation energy and final energy of different positions of Li+ doped BAS. The result demonstrated that Li+ should substitute Al3+ to promote the hexacelsian-tocelsian transformation with the aid of generated oxygen vacancies. The sintering behavior, crystal structure, surface appearance, and microwave dielectric properties of samples were investigated. Completely transformed celsian could be obtained when x = 0.005-0.03, which lowered the sintering temperature from 1400 degrees C (x = 0) to 1300 degrees C (x = 0.03), as well as strikingly improved the compactness, quality factor (Q x f) value and temperature coefficient of resonant frequency (tau(f)) of BAS ceramics. When x = 0.1, unveiling the significant effects of Al-position ion substitution, BaAl1.98Li0.02Si2O2.98 ceramic sintered at 1350 degrees C for 5 h exhibited a supreme Q x f value of 48,620 GHz, and the epsilon(r) and tau(f) values were 6.99 and -23.29 x 10(-)(6) degrees C-1, respectively.
引用
收藏
页码:4895 / 4904
页数:10
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