Optical gain and collector current characteristics of resonant-cavity phototransistors

被引：17
作者：
Lin, CC [1 ]
Martin, W
Harris, JS
Sugihwo, F
机构：
[1] Stanford Univ, Solid State Photon Lab, Stanford, CA 94305 USA
[2] Agilent Technol, Microwave Technol Ctr, Santa Rosa, CA 95403 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 09期
关键词：
D O I：
10.1063/1.125978
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An analytic model for current gain as a function of optical input power in heterojunction bipolar phototransistors is developed. The model provides excellent agreement with the dc measurements of a resonant-cavity-enhanced heterojunction bipolar phototransistor. The model is extended to explain small-signal results. (C) 2000 American Institute of Physics. [S0003-6951(00)00409-5].
引用
收藏
页码：1188 / 1190
页数：3
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