A 38% tuning range 6-GHz fully integrated VCO

被引：0

作者：

Itoh, N ^{[1
]}

Ishizuka, S ^{[1
]}

Katoh, K ^{[1
]}

Shimizu, Y ^{[1
]}

Yonemura, K ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semicond Co, Kawasaki, Kanagawa 2128520, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2002年 / E85C卷 / 08期

关键词：

fully integrated VCO; SiGe; 6GHz; high tuning range;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 6 GHz integrated VCO using SiGe BiCMOS process has been studied. The integrated inductors were realized by third metal with 3 mum thickness aluminum and its Q = 20 at 6 GHz. The amplifier consisted of bipolar transistor. Tuning range was 38% with 0 V to 3 V timing voltage. Phase noise of -100 dBc/Hz was obtained at 1 MHz offset from carrier frequency. The current consumption of VCO was 4.9 mA at 3 V power supply.

引用

页码：1604 / 1606

页数：3