Influence of the deposition conditions on the crystallographic structure and the GaAs refraction index

An experimental study of the influence of deposition conditions of GaAs thin films growth, by radio frequency Sputtering method, on the structure and the refraction index has been performed. The X-ray diffraction and spectro photo meter results, with different deposition conditions, are reported. The refraction index depends on the structure, which also depends on four deposition parameters, namely, the self-bias voltage, V(p), the argon pressure, P(Ar), the target-to-substrate distance, d, and the substrate temperature, T(s). Hence, it has been observed that, the index refraction of the films decreases with V(p) and T(s) and increases essentially with P(Ar). Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.