Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

被引：6
|
作者：
Torigoe, Kazuhisa [1 ]
Fujise, Jun [1 ]
Ono, Toshiaki [1 ]
Nakamura, Kozo [2 ]
机构：
[1] SUMCO Corp, Adv Evaluat & Technol Dev Dept, Div Technol, Imari, Saga 8494256, Japan
[2] Okayama Prefectural Univ, Dept Commun Engn, Okayama 7191197, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 19期
关键词：
CZOCHRALSKI SILICON; DISLOCATION LOCKING; PRECIPITATION; IMPURITIES;
D O I：
10.1063/1.4901987
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10(18) cm(-3) -10(19) cm(-3) at temperatures from 750 degrees C to 950 degrees C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position. (C) 2014 AIP Publishing LLC.
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页数：5
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